General view

D800S

IPRS Băneasa

Also known as
D800S1800, D800S2000, D800S2200, D800S2400, D800S2600
Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
fast recovery rectifier diode
Repetitive peak reverse voltage (VRRM)
1800–2600 V (see Variants)
Max. RMS forward current (IFRMSM)
1800 A
Max. average forward current (IFAVM)
800 A
IFAVM given at
TC = 100 °C
Surge forward current (IFSM, 10 ms)
15500 A
Forward voltage (VF)
4 V
VF measured at IF
3600 A
Threshold voltage (VF0)
1.07 V
Slope resistance (rF)
0.325 mΩ
Reverse current (IR)
150 mA (TJ = 150 °C)
Stored charge (Qs)
660 µAs
Max. junction temperature (Tj)
150 °C
Package
T-30
Application
rectifier diode

Sources: [1]

Variants (5)

Note
D800S180018001990 catalogue (preliminary data)
D800S200020001990 catalogue (preliminary data)
D800S220022001990 catalogue (preliminary data)
D800S240024001990 catalogue (preliminary data)
D800S260026001990 catalogue (preliminary data)

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Description

The D800S is a silicon fast recovery rectifier diode made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the D800S1800, D800S2000, D800S2200, D800S2400 and D800S2600 (preliminary data) among the „Fast recovery rectifiers ( IFAVM > 100 A )” of its „Rectifiers” section [1]. Their values are under Variants [1]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a typical value, Qs (stored charge, µAs) is a maximum [1].

Gallery

IPRS Băneasa D800S: T-30 case outline, silicon diodes (dimensions in mm)No image available
T-30 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Fast recovery rectifiers ( IFAVM > 100 A )”, pp. 5-52…5-53