General view

DC4

IPRS Băneasa

Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
thermal compensation diode
Forward current (IF)
0.05 A
Peak forward current (IFM)
0.05 A
Forward voltage (VF)
0.65…0.85 V (IF = 5 mA)
Temperature coefficient of VF (KT)
1.8 mV/°C
Power dissipation (Ptot)
0.3 W
Max. junction temperature (Tj)
150 °C
Thermal resistance, junction–ambient (Rth j-a)
420 °C/W
Package
TO-92A

Sources: [1][2]

Description

The DC4 is a diode for thermal compensation made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a forward voltage VF of 0.65…0.85 V at IF = 5 mA and a temperature coefficient KT of 1.8 mV/°C, in a TO-92A package [1].

The table gives a peak forward current IFM of 50 mA and a junction-to-ambient thermal resistance of 420 °C/W; the code is printed „DC 4” [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the DC4 among the „Diodes for thermal compensation” of its „Small signal” section [2], with IF 50 mA, Ptot 300 mW (TA = 25 °C), TJM 150 °C, thermal coefficient 2 mV/°C, VF 650–850 mV (IF = 5 mA), VF 700–1200 mV (IF = 30 mA), TO-92h case [2].

The values given for the DC4 elsewhere on this page [1] differ: KT 1.8 mV/°C; package TO-92A.

Gallery

IPRS Băneasa DC4: TO-92h case outline, silicon diodes (dimensions in mm)No image available
TO-92h case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.5 „Alte diode semiconductoare produse în R.S.R.” (producător: IPRS – Băneasa), C. „Diode pentru compensare termică”, p. 516
  2. [2]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Small signal”, „Diodes for thermal compensation”, p. 5-04