DGD51

The DGD51 is a silicon diode for teaching use made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) among the silicon diodes for teaching use; the table gives the family it comes from as the BA 243/BA244 and 1N 4148 [1].

The code is printed „DGD 51”; the column „Familia de dispozitive din care provine” (family of devices it comes from) gives „BA 243/244, 1N 4148”, and the marking on the case is „portocaliu” [1]. The table gives: VR = 20 V; IF = 100 mA; Tj max = 150 °C; VBR = 20 V at IR = 100 (unit illegible); the IZT column gives 10 mA [1].

A note to the table says that these components come from production outside the branch technical norms (NTR) and are obtained by sorting, that the values in the table are minimum guaranteed values, and that all the diodes come in a glass DO-35 package with the cathode marked by a black ring [1].