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General view

DS30S

IPRS Băneasa

Also known as: DS30S20, DS30S30, DS30S35, DS30S40, DS30S45
Manufacturer: IPRS Băneasa
Country: Romania
Year: Unknown
Category: Components
Type: Diodes
Documentation score: 1/5
Last edited: 25 OCT 2026

Specifications

Material: Si
Type: Schottky rectifier diode
Repetitive peak reverse voltage (VRRM): 20–45 V (see Variants)
Max. average forward current (IFAVM): 30 A
IFAVM given at: TC = 90 °C
Surge forward current (IFSM, 10 ms): 600 A
I²t: 1800 A²s
Forward voltage (VF): 0.65 V
VF measured at IF: 30 A
Threshold voltage (VF0): 0.38 V
Slope resistance (rF): 6.2 mΩ
Reverse current (IR): 20 µA (TJ = 25 °C)
Reverse recovery time (trr): 1500 ns
Max. junction temperature (Tj): 125 °C
Package: DO-4
Application: rectifier diode

Sources: [1]

Variants (5)

		Note
DS30S20	20	1990 catalogue
DS30S30	30	1990 catalogue
DS30S35	35	1990 catalogue
DS30S40	40	1990 catalogue
DS30S45	45	1990 catalogue

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Description

The DS30S is a silicon Schottky rectifier diode made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the DS30S20, DS30S30, DS30S35, DS30S40 and DS30S45 among the „Schottky rectifiers” of its „Rectifiers” section [1]. Their values are under Variants [1]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a typical value, trr is a maximum (in µs) and i²t is printed in kA²s [1].

Gallery

IPRS Băneasa DS30S: DO-4 case outline, silicon diodes (dimensions in mm) — DO-4 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

[1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Schottky rectifiers”, pp. 5-58…5-59