General view

DS50S

IPRS Băneasa

Also known as
DS50S20, DS50S30, DS50S35, DS50S40, DS50S45
Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
Schottky rectifier diode
Repetitive peak reverse voltage (VRRM)
20–45 V (see Variants)
Max. average forward current (IFAVM)
50 A
IFAVM given at
TC = 82 °C
Surge forward current (IFSM, 10 ms)
700 A
I²t
2450 A²s
Forward voltage (VF)
0.65 V
VF measured at IF
50 A
Threshold voltage (VF0)
0.38 V
Slope resistance (rF)
2.75 mΩ
Reverse current (IR)
25 µA (TJ = 25 °C)
Reverse recovery time (trr)
900 ns
Max. junction temperature (Tj)
125 °C
Package
DO-5
Application
rectifier diode

Sources: [1]

Variants (5)

Note
DS50S20201990 catalogue
DS50S30301990 catalogue
DS50S35351990 catalogue
DS50S40401990 catalogue
DS50S45451990 catalogue

Click a column heading to sort. „+” adds a variant to the comparison (DS50S).

Description

The DS50S is a silicon Schottky rectifier diode made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the DS50S20, DS50S30, DS50S35, DS50S40 and DS50S45 among the „Schottky rectifiers” of its „Rectifiers” section [1]. Their values are under Variants [1]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a typical value, trr is a maximum (in µs) and i²t is printed in kA²s [1].

Gallery

IPRS Băneasa DS50S: DO-5 case outline, silicon diodes (dimensions in mm)No image available
DO-5 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Schottky rectifiers”, pp. 5-58…5-59