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General view

DS60S

IPRS Băneasa

Also known as: DS60S20, DS60S30, DS60S35, DS60S40, DS60S45
Manufacturer: IPRS Băneasa
Country: Romania
Year: Unknown
Category: Components
Type: Diodes
Documentation score: 1/5
Last edited: 25 OCT 2026

Specifications

Material: Si
Type: Schottky rectifier diode
Repetitive peak reverse voltage (VRRM): 20–45 V (see Variants)
Max. average forward current (IFAVM): 60 A
IFAVM given at: TC = 82 °C
Surge forward current (IFSM, 10 ms): 800 A
I²t: 3200 A²s
Forward voltage (VF): 0.65 V
VF measured at IF: 60 A
Threshold voltage (VF0): 0.38 V
Slope resistance (rF): 2.75 mΩ
Reverse current (IR): 25 µA (TJ = 25 °C)
Reverse recovery time (trr): 900 ns
Max. junction temperature (Tj): 125 °C
Package: DO-5
Application: rectifier diode

Sources: [1]

Variants (5)

		Note
DS60S20	20	1990 catalogue
DS60S30	30	1990 catalogue
DS60S35	35	1990 catalogue
DS60S40	40	1990 catalogue
DS60S45	45	1990 catalogue

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Description

The DS60S is a silicon Schottky rectifier diode made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the DS60S20, DS60S30, DS60S35, DS60S40 and DS60S45 among the „Schottky rectifiers” of its „Rectifiers” section [1]. Their values are under Variants [1]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a typical value, trr is a maximum (in µs) and i²t is printed in kA²s [1].

Gallery

IPRS Băneasa DS60S: DO-5 case outline, silicon diodes (dimensions in mm) — DO-5 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

[1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Schottky rectifiers”, pp. 5-58…5-59