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EFD103

IPRS Băneasa

Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
09 OCT 2026

Specifications

Material
Ge
Type
signal and switching diode
Peak reverse voltage (VRM)
30 V
Max. average forward current (IFAVM)
0.02 A
Forward voltage (VF)
1 V
Marking on the case
rings red–blue–yellow („roșu-albastru-galben”), read from C to A
Package
DO-7 (F-2), glass

Sources: [1]

Description

The EFD103 is a germanium signal and switching diode made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a peak reverse voltage VRM of 30 V [1]. The package drawing is in the Gallery.

The code is printed „EFD 103”. The table gives: peak reverse voltage VRM 30 V, average forward current IFAV 20 mA, forward voltage VF 1 V at IF = 5 mA; its rings are red–blue–yellow („roșu-albastru-galben”), read from the cathode to the anode [1].

Gallery

IPRS Băneasa EFD103: DO-7 (F-2) glass package, diode, with 1…3 coloured rings („1…3 inele colorate”); C = cathode, A = anodeNo image available
DO-7 (F-2) glass package, diode, with 1…3 coloured rings („1…3 inele colorate”); C = cathode, A = anode

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.3.2 „Diode pentru semnale de mică putere produse în RSR” (producător: IPRS-Băneasa), „Diode cu germaniu, de semnal și comutație”, p. 511