General view

EM513

IPRS Băneasa

Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
08 OCT 2026

Specifications

Material
Si
Type
rectifier diode
Repetitive peak reverse voltage (VRRM)
1600 V
Forward current (IF)
1.15 A
Rectified current (Io)
1 A
Repetitive peak forward current (IFRM)
6.5 A
Surge forward current (IFSM, 10 ms)
30 A
Forward voltage (VF)
1.1 V
Reverse current (IR)
0.05 mA
Package
F-126

Sources: [1]

Description

The EM513 is a silicon rectifier diode made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (1st edition, 1983) with a repetitive peak reverse voltage VRRM of 1600 V and a rectified current Io of 1 A [1]. The package drawing is in the Gallery.

It appears only in the 1st edition of the Agenda (printed „EM 513”, in the same block as the 1N 4001…1N 4007) [1]; the 2nd edition (1989) no longer lists it [2].

Measurement conditions (as printed in the table): IF at Tamb = 75 °C; Io at Tamb = 75 °C; VF at IF = 1 A; IR at Tamb = 100 °C; IFSM for 10 ms.

Gallery

IPRS Băneasa EM513: F-126 package, diode: coloured band („Bandă colorată”) at the cathode end (C = cathode, A = anode)No image available
F-126 package, diode: coloured band („Bandă colorată”) at the cathode end (C = cathode, A = anode)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 1st edition, Editura Tehnică, 1983, section 3.9.2.1 „Diode redresoare”, „Diode cu siliciu”, pp. 428–429
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Diode cu siliciu”, pp. 490–499