F057…F407
IPRS Băneasa
- Also known as
- F057, F087, F107, F207, F307, F407
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Diodes
- Documentation score
- 1/5
- Last edited
- 25 OCT 2026
Specifications
- Material
- Si
- Type
- rectifier diode
- Repetitive peak reverse voltage (VRRM)
- 50–800 V (see Variants)
- Max. RMS forward current (IFRMSM)
- 1 A
- Max. average forward current (IFAVM)
- 0.75 A
- IFAVM given at
- TL = 110 °C
- Repetitive peak forward current (IFRM)
- 4 A
- Surge forward current (IFSM, 10 ms)
- 20–30 A (see Variants)
- I²t
- 4.5 A²s
- Forward voltage (VF)
- 1 V
- VF measured at IF
- 0.75 A
- Threshold voltage (VF0)
- 0.87 V
- Slope resistance (rF)
- 100 mΩ
- Reverse current (IR)
- 0.05 mA
- Max. junction temperature (Tj)
- 150 °C
- Package
- DO-13 (F-61)
Variants (6)
| Compare | |||
|---|---|---|---|
| F057 | 50 | 30 | |
| F087 | 80 | 30 | |
| F107 | 100 | 20 | |
| F207 | 400 | 30 | |
| F307 | 600 | 30 | |
| F407 | 800 | 30 |
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Description
The F057…F407 is a series of silicon rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 50–800 V and a maximum average forward current of 0.75 A [1]. Its codes are in the Variants table; the package drawing is in the Gallery.
The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the F057, F087, F107, F207, F307 and F407 among the „Standard rectifiers ( IFAVM < 100 A )” of its „Rectifiers” section [2]. The catalog values this page did not have (IFAVM temperature, IF of VF, VF0, rF, TJM) are under Variants [2]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum and i²t is printed in kA²s [2]. For all the codes of this table the catalog gives IR 5 µA (TJ = 25 °C) (elsewhere on this page: 0.05 mA) [2]. For the F107 the catalog gives IFSM 30 A (elsewhere on this page: 20 A) [2].
Measurement conditions (as printed in the table): IFRMSM at Tamb = 95 °C; IFAVM at Tamb = 25 °C; VF at IF = 0.75 A; IR at Tamb = 100 °C; IFSM for 10 ms.
Gallery
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Diode cu siliciu”, pp. 490–491
- [2]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Standard rectifiers ( IFAVM < 100 A )”, pp. 5-20…5-21