General view

F102…F112

IPRS Băneasa

Also known as
F102, F202, F402, F602, F802, F112
Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
rectifier diode
Repetitive peak reverse voltage (VRRM)
100–1000 V (see Variants)
Max. RMS forward current (IFRMSM)
3 A
Max. average forward current (IFAVM)
2 A
IFAVM given at
TL = 50 °C
Repetitive peak forward current (IFRM)
6.5 A
Surge forward current (IFSM, 10 ms)
70 A
I²t
24.5 A²s
Forward voltage (VF)
1.2 V
VF measured at IF
2 A
Threshold voltage (VF0)
1.06 V
Slope resistance (rF)
54 mΩ
Reverse current (IR)
1 mA
Max. junction temperature (Tj)
150 °C
Package
DO-13 (F-61)

Sources: [1][2]

Variants (6)

F102100
F202200
F402400
F602600
F802800
F1121000

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Description

The F102…F112 is a series of silicon rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 100–1000 V and a maximum average forward current of 2 A [1]. Its codes are in the Variants table; the package drawing is in the Gallery.

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the F102, F202, F402, F602, F802 and F112 among the „Standard rectifiers ( IFAVM < 100 A )” of its „Rectifiers” section [2]. The catalog values this page did not have (IFAVM temperature, IF of VF, VF0, rF, TJM) are under Variants [2]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum and i²t is printed in kA²s [2]. For all the codes of this table the catalog gives IR 10 µA (TJ = 25 °C) (elsewhere on this page: 1 mA) [2].

Measurement conditions (as printed in the table): IFRMSM at Tamb = 25 °C; IFAVM at Tamb = 25 °C; VF at IF = 2 A; IR at Tamb = 150 °C; IFSM for 10 ms.

Gallery

IPRS Băneasa F102…F112: DO-13 (F-61) package, diode (C = cathode, A = anode)No image available
DO-13 (F-61) package, diode (C = cathode, A = anode)
IPRS Băneasa F102…F112: DO-13 case outline, silicon diodes (dimensions in mm)No image available
DO-13 case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Diode cu siliciu”, pp. 490–491
  2. [2]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Standard rectifiers ( IFAVM < 100 A )”, pp. 5-20…5-21