F4AC…F10AC
IPRS Băneasa
- Also known as
- F4AC, F6AC, F8AC, F10AC
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Diodes
- Documentation score
- 1/5
- Last edited
- 25 OCT 2026
Specifications
- Type
- controlled-avalanche rectifier diode
- Repetitive peak reverse voltage (VRRM)
- 5 different values (see Variants)
- Max. average forward current (IFAVM)
- 1 A
- IFAVM given at
- TL = 75 °C (see Variants)
- Repetitive peak forward current (IFRM)
- 6.5 A (see Variants)
- Surge forward current (IFSM, 10 ms)
- 10–30 A (see Variants)
- I²t
- 1.1–4.5 A²s (see Variants)
- Forward voltage (VF)
- 1.1 V (see Variants)
- VF measured at IF
- 1 A (see Variants)
- Threshold voltage (VF0)
- 1 V (see Variants)
- Slope resistance (rF)
- 66 mΩ (see Variants)
- Reverse current (IR)
- 500 µA (TJ = 150 °C) (see Variants)
- Avalanche voltage (VRA)
- 5 different values (see Variants)
- Non-repetitive peak reverse power (PRSM)
- 5 different values (see Variants)
- Package
- DO-13
Variants (5)
| Note | Compare | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| F4AC…F10AC | 400…1000 V | — | — | 10 | 1.1 | — | — | — | — | — | 450…1700 V | 5…1 kW | the whole series, as given elsewhere on this page | |
| F4AC | 400 | TL = 75 °C | 6.5 | 30 | 4.5 | 1.1 | 1 | 1 | 66 | 500 µA (TJ = 150 °C) | 450–750 V | 5 kW | 1990 catalogue | |
| F6AC | 600 | TL = 75 °C | 6.5 | 30 | 4.5 | 1.1 | 1 | 1 | 66 | 500 µA (TJ = 150 °C) | 720–1000 V | 3 kW | 1990 catalogue | |
| F8AC | 800 | TL = 75 °C | 6.5 | 30 | 4.5 | 1.1 | 1 | 1 | 66 | 500 µA (TJ = 150 °C) | 950–1400 V | 2 kW | 1990 catalogue | |
| F10AC | 1000 | TL = 75 °C | 6.5 | 30 | 4.5 | 1.1 | 1 | 1 | 66 | 500 µA (TJ = 150 °C) | 1200–1700 V | 1 kW | 1990 catalogue |
Click a column heading to sort. „+” adds a variant to the comparison (F4AC…F10AC).
Description
The F4AC…F10AC is a series of controlled-avalanche rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 400…1000 V and a maximum average forward current IFAVM of 1 A, in a DO-13 package [1].
The table prints the series as „F4AC… …10 AC”, with the repetitive peak reverse voltage VRRM, the avalanche voltage VRA (explained in a note to the table) and the non-repetitive peak reverse power PRSM given as ranges for the whole series [1].
The table of section 27.5 has no drawings; the drawing of the DO-13 package in the Gallery is the one printed in the rectifier diode table of section 27.1.2 [1].
The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the F4AC, F6AC, F8AC and F10AC among the „Controlled avalanche rectifiers” of its „Rectifiers” section [2]. The codes new on this page and the catalog values it did not have (IFAVM temperature, IFRM, VF, IF of VF, VF0, rF, IR) are under Variants [2]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a typical value and i²t is printed in kA²s; VRA (min–max) is the avalanche voltage and PRSM the non-repetitive peak reverse power, and IR is given at the maximum TJ [2]. For all the codes of this table the catalog gives IFSM 30 A; i²t 4.5 A²s (elsewhere on this page: IFSM 10 A; i²t 1.1 A²s) [2].
Conditions (as printed in the table): IFAVM at T = 75 °C; IFSM at T = 175 °C; I²t at T = 175 °C.
Gallery
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.5 „Alte diode semiconductoare produse în R.S.R.” (producător: IPRS – Băneasa), A. „Diode redresoare cu avalanșă controlată”, p. 516
- [2]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Controlled avalanche rectifiers”, pp. 5-56…5-57