General view

KS1060…KS1160

IPRS Băneasa

Also known as
KS1060, KS1060R, KS4060, KS4060R, KS6060, KS6060R, KS1160, KS1160R, KS1060-S, KS4060-S, KS6060-S, KS1160-S
Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
rectifier diode
Repetitive peak reverse voltage (VRRM)
100–1000 V (see Variants)
Max. RMS forward current (IFRMSM)
90 A
Max. average forward current (IFAVM)
60 A
IFAVM given at
TC = 110 °C
Repetitive peak forward current (IFRM)
200 A
Surge forward current (IFSM, 10 ms)
1500 A
I²t
11250 A²s
Forward voltage (VF)
1.2 V
VF measured at IF
190 A
Threshold voltage (VF0)
1 V
Slope resistance (rF)
0.8 mΩ
Reverse current (IR)
5 mA, 5 mA (TJ = 125 °C) (see Variants)
Max. junction temperature (Tj)
150 °C
Package
F-62m, B-27 (see Variants)

Sources: [1][2]

Variants (12)

NoteCompare
KS10601005 mAF-62m
KS1060R1005 mAF-62mreverse polarity
KS40604005 mAF-62m
KS4060R4005 mAF-62mreverse polarity
KS60606005 mAF-62m
KS6060R6005 mAF-62mreverse polarity
KS116010005 mAF-62m
KS1160R10005 mAF-62mreverse polarity
KS1060-S1005 mA (TJ = 125 °C)B-271990 catalogue
KS4060-S4005 mA (TJ = 125 °C)B-271990 catalogue
KS6060-S6005 mA (TJ = 125 °C)B-271990 catalogue
KS1160-S10005 mA (TJ = 125 °C)B-271990 catalogue

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Description

The KS1060…KS1160 is a series of silicon rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 100–1000 V and a maximum average forward current of 60 A [1]. Its codes are in the Variants table; the package drawing is in the Gallery.

Each code also exists with R at the end (printed „(R)”); on the package drawing the stud is the cathode for the codes without R and the anode for the codes with R [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the KS1060, KS4060, KS6060, KS1160, KS1060-S, KS4060-S, KS6060-S and KS1160-S among the „Standard rectifiers ( IFAVM < 100 A )” of its „Rectifiers” section [2]. The codes new on this page and the catalog values it did not have (IFAVM temperature, IF of VF, VF0, rF, TJM) are under Variants [2]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum and i²t is printed in kA²s; the codes marked „(R)” are also made with reverse polarity; the „-S” codes have a metal-glass case [2].

Measurement conditions (as printed in the table): IFRMSM at Tamb = 110 °C; IFAVM at Tamb = 95 °C; VF at IF = 190 A; IR at Tamb = 150 °C; IFSM for 10 ms.

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Diode cu siliciu”, pp. 494–495
  2. [2]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Standard rectifiers ( IFAVM < 100 A )”, pp. 5-28…5-29