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MDD125N

IPRS Băneasa

Manufacturer: IPRS Băneasa
Country: Romania
Year: Unknown
Category: Components
Type: Diodes
Documentation score: 1/5
Last edited: 09 OCT 2026

Specifications

Type: dual-diode module
Repetitive peak reverse voltage (VRRM): 400…1600 V
Max. average forward current (IFAVM): 125 A
Surge forward current (IFSM, 10 ms): 2000 A
I²t: 28800 A²s
Thermal resistance, junction–case (Rth j-c): 0.32 °C/W
Package: K-25

Sources: [1]

Description

The MDD125N is a dual-diode module made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 400…1600 V and a maximum average forward current IFAVM of 125 A, in a K-25 package [1].

The code is printed „MDD 125 N”. The table gives IFSM = 2 kA, I²t = 28.8 kA²s and a junction-to-case thermal resistance of 0.32 °C/W per diode [1].

Conditions (as printed in the table): IFAVM at T = 100 °C.

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Documents

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References

[1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.5 „Alte diode semiconductoare produse în R.S.R.” (producător: IPRS – Băneasa), D. „Module dublă-diodă”, p. 516