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RAG115/RAG215

IPRS Băneasa

Also known as
RAG115, RAG215, RAG415, RAG615
Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Type
rectifier diode
Repetitive peak reverse voltage (VRRM)
100–600 V (see Variants)
Max. RMS forward current (IFRMSM)
20 A
Max. average forward current (IFAVM)
15 A
IFAVM given at
TC = 100 °C
Repetitive peak forward current (IFRM)
50–60 A (see Variants)
Surge forward current (IFSM, 10 ms)
250 A
I²t
312 A²s
Forward voltage (VF)
1.2–1.4 V (see Variants)
VF measured at IF
50 A
Threshold voltage (VF0)
0.95 V
Slope resistance (rF)
3.75 mΩ
Reverse current (IR)
3 mA, 3 mA (TJ = 150 °C) (see Variants)
Max. junction temperature (Tj)
150 °C
Package
RAG

Sources: [1][3]

Variants (4)

Note
RAG115100601.43 mA
RAG215200601.43 mA
RAG415400501.23 mA (TJ = 150 °C)1990 catalogue
RAG615600501.23 mA (TJ = 150 °C)1990 catalogue

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Description

The RAG115/RAG215 is a series of silicon rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 100–200 V and a maximum average forward current of 15 A [1]. Its codes are in the Variants table; the package drawing is in the Gallery.

The 1st edition of the Agenda (1983) says that the three-phase rectifier bridge 45PT2 contains six RAG 215 diodes with a heatsink [2].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the RAG115, RAG215, RAG415 and RAG615 among the „Standard rectifiers ( IFAVM < 100 A )” of its „Rectifiers” section [3]. The codes new on this page and the catalog values it did not have (IFAVM temperature, i²t, IF of VF, VF0, rF, TJM) are under Variants [3]. In this table VF and IR are maximum values (at the IF and TJ given), VF0 is a maximum and i²t is printed in kA²s [3]. For the codes of this table already on this page the catalog gives IFRM 50 A; VF 1.2 V (elsewhere on this page: IFRM 60 A; VF 1.4 V) [3].

Measurement conditions (as printed in the table): IFRMSM at Tamb = (100) °C; IFAVM at Tamb = (100) °C; VF at IF = 60 A; IR at Tamb = 150 °C; IFSM for 10 ms. Temperatures in brackets are printed in brackets in the table.

Gallery

IPRS Băneasa RAG115/RAG215: RAG package (the + terminal, on the upper plate, is marked)No image available
RAG package (the + terminal, on the upper plate, is marked)
IPRS Băneasa RAG115/RAG215: RAG case outline, silicon diodes (dimensions in mm)No image available
RAG case outline, silicon diodes (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Diode cu siliciu”, pp. 490–491
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 1st edition, Editura Tehnică, 1983, section 3.9.2.1 „Diode redresoare”, „Punți redresoare”, pp. 436–437
  3. [3]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 5 „Silicon diodes”, „Rectifiers”, „Standard rectifiers ( IFAVM < 100 A )”, pp. 5-22…5-23