Si10-1…Si10-10
IPRS Băneasa
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Diodes
- Documentation score
- 1/5
- Last edited
- 08 OCT 2026
Specifications
- Material
- Si
- Type
- rectifier diode
- Repetitive peak reverse voltage (VRRM)
- 100–1000 V (see Variants)
- Forward current (IF)
- 12 A
- Rectified current (Io)
- 10 A
- Repetitive peak forward current (IFRM)
- 35 A
- Surge forward current (IFSM, 10 ms)
- 230 A
- Forward voltage (VF)
- 1.3 V
- Reverse current (IR)
- 0.01 mA
- Package
- RGH-A
Sources: [1]
Variants (4)
| Compare | ||
|---|---|---|
| Si10-1 | 100 | |
| Si10-3 | 300 | |
| Si10-6 | 600 | |
| Si10-10 | 1000 |
Click a column heading to sort. „+” adds a variant to the comparison (Si10-1…Si10-10).
Description
The Si10-1…Si10-10 is a series of silicon rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (1st edition, 1983) with a repetitive peak reverse voltage VRRM of 100–1000 V and a rectified current Io of 10 A [1]. Its codes are in the Variants table; the package drawing is in the Gallery.
The block appears only in the 1st edition of the Agenda (printed „Si 10-1” … „Si 10-10”) [1]; the 2nd edition (1989) no longer lists these codes [2].
Measurement conditions (as printed in the table): IF at Tamb = (125) °C; Io at Tamb = (125) °C; VF at IF = 35 A; IR at Tamb = (125) °C; IFSM for 10 ms. Temperatures in brackets are printed in brackets in the table.
Gallery
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No documents available yet.
References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 1st edition, Editura Tehnică, 1983, section 3.9.2.1 „Diode redresoare”, „Diode cu siliciu”, pp. 430–431
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Diode cu siliciu”, pp. 490–499