TU21…TU29
IPRS Băneasa
- Manufacturer
- IPRS Băneasa

- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Diodes
- Documentation score
- 1/5
- Last edited
- 08 OCT 2026
Specifications
- Material
- Si
- Type
- rectifier diode
- Repetitive peak reverse voltage (VRRM)
- 200–1800 V (see Variants)
- Max. RMS forward current (IFRMSM)
- 240 A
- Max. average forward current (IFAVM)
- 200 A
- Repetitive peak forward current (IFRM)
- 650 A
- Surge forward current (IFSM, 10 ms)
- 3800 A
- Forward voltage (VF)
- 1.4 V
- Reverse current (IR)
- 4 mA
- Package
- S-246
Sources: [1]
Variants (14)
| Note | Compare | ||
|---|---|---|---|
| TU21 | 200 | ||
| TU21R | 200 | reverse polarity | |
| TU22 | 400 | ||
| TU22R | 400 | reverse polarity | |
| TU23 | 800 | ||
| TU23R | 800 | reverse polarity | |
| TU24 | 1000 | ||
| TU24R | 1000 | reverse polarity | |
| TU25 | 1200 | ||
| TU25R | 1200 | reverse polarity | |
| TU28 | 1300 | ||
| TU28R | 1300 | reverse polarity | |
| TU29 | 1800 | ||
| TU29R | 1800 | reverse polarity |
Click a column heading to sort. „+” adds a variant to the comparison (TU21…TU29).
Description
The TU21…TU29 is a series of silicon rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 200–1800 V and a maximum average forward current of 200 A [1]. Its codes are in the Variants table; the package drawing is in the Gallery.
The package drawing is not named in the 2nd edition; the 1st edition of the Agenda (1983) calls the same package of the TU diodes S-246 [1][3].
Each code also exists with R at the end (printed „(R)”), which the coding table of the same section gives as reverse polarity, with the anode on the base [1][2].
Measurement conditions (as printed in the table): IFRMSM at Tamb = 110 °C; IFAVM at Tamb = (110) °C; VF at IF = 650 A; IR at Tamb = 125 °C; IFSM for 10 ms. Temperatures in brackets are printed in brackets in the table.
Gallery
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No documents available yet.
References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Diode cu siliciu”, pp. 498–499
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Codificarea unor diode redresoare cu siliciu de medie/mare putere, produse de IPRS – Băneasa (conf. NTR 19036-80)”, p. 489
- [3]N. Drăgulănescu – „Agenda radioelectronistului”, 1st edition, Editura Tehnică, 1983, section 3.9.2.1 „Diode redresoare”, „Diode cu siliciu”, pp. 434–435