General view

TU31…TU35

IPRS Băneasa

Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
08 OCT 2026

Specifications

Material
Si
Type
rectifier diode
Repetitive peak reverse voltage (VRRM)
200–1200 V (see Variants)
Max. RMS forward current (IFRMSM)
350 A
Max. average forward current (IFAVM)
300 A
Repetitive peak forward current (IFRM)
1100 A
Surge forward current (IFSM, 10 ms)
5000 A
Forward voltage (VF)
1.4 V
Reverse current (IR)
4 mA
Package
S-246

Sources: [1]

Variants (10)

Note
TU31200
TU31R200reverse polarity
TU32400
TU32R400reverse polarity
TU33800
TU33R800reverse polarity
TU341000
TU34R1000reverse polarity
TU351200
TU35R1200reverse polarity

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Description

The TU31…TU35 is a series of silicon rectifier diodes made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) with a repetitive peak reverse voltage VRRM of 200–1200 V and a maximum average forward current of 300 A [1]. Its codes are in the Variants table; the package drawing is in the Gallery.

The package drawing is not named in the 2nd edition; the 1st edition of the Agenda (1983) calls the same package of the TU diodes S-246 [1][3].

Each code also exists with R at the end (printed „(R)”), which the coding table of the same section gives as reverse polarity, with the anode on the base [1][2].

Measurement conditions (as printed in the table): IFRMSM at Tamb = 100 °C; IFAVM at Tamb = (100) °C; VF at IF = 1100 A; IR at Tamb = 125 °C; IFSM for 10 ms. Temperatures in brackets are printed in brackets in the table.

Gallery

IPRS Băneasa TU31…TU35: Package of the TU rectifier diodes, unnamed in the 2nd edition (S-246 in the 1st): C = stud, A = braided leadNo image available
Package of the TU rectifier diodes, unnamed in the 2nd edition (S-246 in the 1st): C = stud, A = braided lead

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Diode cu siliciu”, pp. 498–499
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.1.2 „Diode redresoare produse în R.S.R.”, „Codificarea unor diode redresoare cu siliciu de medie/mare putere, produse de IPRS – Băneasa (conf. NTR 19036-80)”, p. 489
  3. [3]N. Drăgulănescu – „Agenda radioelectronistului”, 1st edition, Editura Tehnică, 1983, section 3.9.2.1 „Diode redresoare”, „Diode cu siliciu”, pp. 434–435