General view

Z2V7…51

IPRS Băneasa

Year
Unknown
Category
Components
Type
Diodes
Documentation score
1/5
Last edited
09 OCT 2026

Specifications

Material
Si
Type
Zener diode for teaching use
Reverse voltage (VR)
2.7…51 V (VZT)
Power dissipation (Ptot)
0.35 W
Max. junction temperature (Tj)
175 °C
Marking on the case
any („indiferent”)
Package
DO-35 (glass)
Application
teaching

Sources: [1]

Description

The Z2V7…51 are Zener diodes for teaching use made in Romania by IPRS Băneasa, listed in the Agenda radioelectronistului (2nd edition, 1989) among the silicon diodes for teaching use; the table gives the family they come from as the DZ2 V7…56 Zener diodes [1].

The code is printed „Z2 V7…51”; the column „Familia de dispozitive din care provine” (family of devices it comes from) gives „DZ2 V7…56”, and the marking on the case is „(indiferent)” [1]. The table gives: VR = 2.7…51 V (= VZT); IZM = Ptot/VZT; Ptot = 350 mW; Tj max = 175 °C; IZT = 5 mA [1].

A note to the table says that these components come from production outside the branch technical norms (NTR) and are obtained by sorting, that the values in the table are minimum guaranteed values, and that all the diodes come in a glass DO-35 package with the cathode marked by a black ring [1].

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 27.5 „Alte diode semiconductoare produse în R.S.R.” (producător: IPRS – Băneasa), E. „Diode cu siliciu pentru uz didactic”, p. 517