T10F
IPRS Băneasa
- Also known as
- T10R (as printed in the Agenda), T10F-05, T10F-1, T10F-2, T10F-3, T10F-4, T10F-5, T10F-6, T10F-7, T10F-8, T10F-9, T10F-10, T10F-11, T10F-12
- Manufacturer
- IPRS Băneasa
- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Thyristors, diacs & triacs
- Documentation score
- 1/5
- Last edited
- 25 OCT 2026
Specifications
- Type
- thyristor, fast (F)
- Repetitive peak reverse voltage (VRRM)
- 50–1200 V (see Variants)
- Max. average on-state current (IT(AV)M)
- 10 A
- IT(AV)M given at
- TC = 45 °C
- Max. repetitive peak on-state current (ITRM)
- 90 A
- Max. surge on-state current (ITSM)
- 150 A
- I²t
- 112 A²s
- Max. peak gate power (PGM)
- 2 W
- Gate trigger voltage (VGT)
- 3 V
- Gate trigger current (IGT)
- 100 mA
- On-state voltage (VTM)
- 2.4–2.5 V (see Variants)
- VTM measured at IT
- 30 A
- Off-state / reverse current (ID = IR), max.
- 15 mA
- Turn-on time (ton)
- 5 µs
- Turn-off time (tq)
- 20 µs
- Critical rate of rise of off-state voltage (dV/dt)
- 50 V/µs
- Critical rate of rise of on-state current (di/dt)
- 50 A/µs
- Max. junction temperature (TJM)
- 125 °C
- Thermal resistance, junction–case (Rth j-c)
- 2 °C/W
- Package
- TO-48
Variants (13)
| Note | Compare | |||
|---|---|---|---|---|
| T10F-05 | 50 | 2.5 | ||
| T10F-1 | 100 | 2.5 | ||
| T10F-2 | 200 | 2.5 | ||
| T10F-3 | 300 | 2.4 | ||
| T10F-4 | 400 | 2.5 | ||
| T10F-5 | 500 | 2.5 | ||
| T10F-6 | 600 | 2.5 | ||
| T10F-7 | 700 | 2.5 | ||
| T10F-8 | 800 | 2.5 | ||
| T10F-9 | 900 | 2.5 | 1990 catalogue | |
| T10F-10 | 1000 | 2.5 | 1990 catalogue | |
| T10F-11 | 1100 | 2.5 | 1990 catalogue | |
| T10F-12 | 1200 | 2.5 | 1990 catalogue |
Click a column heading to sort. „+” adds a variant to the comparison (T10F).
Description
The T10F is a series of fast silicon thyristors of 10 A listed in the Agenda radioelectronistului (2nd edition, 1989) among the thyristors made in Romania by IPRS Băneasa, in nine voltage classes from 50 V (T10F-05) to 800 V (T10F-8) in a TO-48 package [1]. The values of each code are in the Variants table. The Agenda prints these codes as „T10R-05” … „T10R-8” [1].
The Agenda lists the T10R (i.e. T10F) and T10N versions in one row; the values given separately for the R version are IGT = 100 mA and tq = 20 µs [1].
Coded as (IPRS Băneasa code for thyristors, as given in the Agenda; the 1990 IPRS catalog writes these codes with F) [2]:
| Part | Meaning |
|---|---|
| T | thyristor |
| 10 | on-state current IT = 10 A |
| R | fast (short turn-off time tq) |
| 05…8 | repetitive peak reverse voltage VRRM in hundreds of volts (05 = 50 V … 8 = 800 V) |
The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the T10F-05…T10F-12 (13 codes) among the „Fast switching thyristors ( ITAVM < 100 A )” of its „Thyristors” section [3]. The codes new on this page and the catalog values it did not have (ITAVM temperature, i²t, VT, IT of VT, ID = IR, TJM, RthJ-C) are under Variants [3]. In this table VT (at the IT given), ID = IR, IGT and VGT are maximum values, tq is a maximum, i²t is printed in kA²s, dv/dt is given with the footnote „Different dv/dt groups: C = 100, D = 200, G = 500, K = 1000 V/µs” and RthJ-C = 2 °C/W [3]. For the T10F-3 the catalog gives VT printed „2.4” (the other codes: 2.5) [3].
IT(AV)M at Tc = 85 °C; ITRM at Tc = 85 °C; ITSM for 10 ms; VRRM (= VDRM) at Tc = 125 °C; dV/dt at Tc = 125 °C [1].
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References
- [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 31.2 „Tiristoare produse în R.S.R.”, p. 558
- [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 31.2 „Tiristoare produse în R.S.R.”, p. 556
- [3]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 6 „Thyristors & triacs”, „Thyristors”, „Fast switching thyristors ( ITAVM < 100 A )”, pp. 6-30…6-31