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T10R

IPRS Băneasa

Year
Unknown
Category
Components
Type
Thyristors, diacs & triacs
Documentation score
1/5
Last edited
06 OCT 2026

Specifications

Type
thyristor, fast (R)
Repetitive peak reverse voltage (VRRM)
50–800 V (see Variants)
Max. average on-state current (IT(AV)M)
10 A
Max. repetitive peak on-state current (ITRM)
90 A
Max. surge on-state current (ITSM)
150 A
Max. peak gate power (PGM)
2 W
Gate trigger voltage (VGT)
3 V
Gate trigger current (IGT)
100 mA
Turn-on time (ton)
5 µs
Turn-off time (tq)
20 µs
Critical rate of rise of off-state voltage (dV/dt)
50 V/µs
Critical rate of rise of on-state current (di/dt)
50 A/µs
Package
TO-48

Sources: [1]

Variants (9)

Compare
T10R-0550
T10R-1100
T10R-2200
T10R-3300
T10R-4400
T10R-5500
T10R-6600
T10R-7700
T10R-8800

Click a column heading to sort. „+” adds a variant to the comparison (T10R).

Description

The T10R is a series of fast silicon thyristors of 10 A listed in the Agenda radioelectronistului (2nd edition, 1989) among the thyristors made in Romania by IPRS Băneasa, in nine voltage classes from 50 V (T10R-05) to 800 V (T10R-8) in a TO-48 package [1]. The values of each code are in the Variants table.

The Agenda lists the T10R and T10N versions in one row; the values given separately for the R version are IGT = 100 mA and tq = 20 µs [1].

Coded as (IPRS Băneasa code for thyristors) [2]:

Part Meaning
T thyristor
10 on-state current IT = 10 A
R fast (short turn-off time tq)
05…8 repetitive peak reverse voltage VRRM in hundreds of volts (05 = 50 V … 8 = 800 V)

IT(AV)M at Tc = 85 °C; ITRM at Tc = 85 °C; ITSM for 10 ms; VRRM (= VDRM) at Tc = 125 °C; dV/dt at Tc = 125 °C [1].

Documents

No documents available yet.

References

  1. [1]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 31.2 „Tiristoare produse în R.S.R.”, p. 558
  2. [2]N. Drăgulănescu – „Agenda radioelectronistului”, 2nd edition, Editura Tehnică, 1989, section 31.2 „Tiristoare produse în R.S.R.”, p. 556