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General view

T1200N

IPRS Băneasa

Also known as: T1200N400, T1200N600, T1200N800, T1200N1000, T1200N1100, T1200N1200, T1200N1400, T1200N1600, T1200N1800
Manufacturer: IPRS Băneasa
Country: Romania
Year: Unknown
Category: Components
Type: Thyristors, diacs & triacs
Documentation score: 1/5
Last edited: 25 OCT 2026

Specifications

Type: mains frequency thyristor
Repetitive peak reverse voltage (VRRM): 400–1800 V (see Variants)
Max. average on-state current (IT(AV)M): 1800 A
IT(AV)M given at: TC = 54 °C
Max. RMS on-state current (ITRMS): 2800 A
Max. surge on-state current (ITSM): 24000 A
I²t: 2880000 A²s
Gate trigger voltage (VGT): 2 V
Gate trigger current (IGT): 250 mA
On-state voltage (VTM): 2.1 V
VTM measured at IT: 5600 A
Off-state / reverse current (ID = IR), max.: 150 mA
Turn-off time (tq): 280 µs
Critical rate of rise of off-state voltage (dV/dt): 400 V/µs
Critical rate of rise of on-state current (di/dt): 200 A/µs
Max. junction temperature (TJM): 125 °C
Thermal resistance, junction–case (Rth j-c): 0.021 °C/W
Package: T-50
Application: mains frequency thyristor

Sources: [1]

Variants (9)

		Note
T1200N400	400	1990 catalogue (preliminary data)
T1200N600	600	1990 catalogue (preliminary data)
T1200N800	800	1990 catalogue (preliminary data)
T1200N1000	1000	1990 catalogue (preliminary data)
T1200N1100	1100	1990 catalogue (preliminary data)
T1200N1200	1200	1990 catalogue (preliminary data)
T1200N1400	1400	1990 catalogue (preliminary data)
T1200N1600	1600	1990 catalogue (preliminary data)
T1200N1800	1800	1990 catalogue (preliminary data)

Click a column heading to sort. „+” adds a variant to the comparison (T1200N).

Description

The T1200N is a silicon mains frequency thyristor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the T1200N400…T1200N1800 (9 codes, preliminary data) among the „Mains frequency thyristors ( ITAVM > 100 A )” of its „Thyristors” section [1]. Their values are under Variants [1]. In this table VT (at the IT given), ID = IR, IGT and VGT are maximum values, tq is a maximum, i²t is printed in kA²s and IT in kA, dv/dt is given with the footnote „Different dv/dt groups: C = 400, F = 1000 V/µs” and RthJ-C = 0.021 °C/W [1].

Gallery

IPRS Băneasa T1200N: T-50 case outline, thyristors and triacs (dimensions in mm) — T-50 case outline, thyristors and triacs (dimensions in mm)

Documents

No documents available yet.

References

[1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 6 „Thyristors & triacs”, „Thyristors”, „Mains frequency thyristors ( ITAVM > 100 A )”, pp. 6-26…6-27