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T25F
IPRS Băneasa
- Also known as
- T25F1, T25F2, T25F3, T25F4, T25F5, T25F6, T25F7, T25F8, T25F9, T25F10, T25F11, T25F12
- Manufacturer
- IPRS Băneasa

- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Thyristors, diacs & triacs
- Documentation score
- 1/5
- Last edited
- 25 OCT 2026
Specifications
- Type
- fast switching thyristor
- Repetitive peak reverse voltage (VRRM)
- 100–1200 V (see Variants)
- Max. average on-state current (IT(AV)M)
- 25 A
- IT(AV)M given at
- TC = 85 °C
- Max. RMS on-state current (ITRMS)
- 37 A
- Max. surge on-state current (ITSM)
- 375 A
- I²t
- 700 A²s
- Gate trigger voltage (VGT)
- 1.5 V
- Gate trigger current (IGT)
- 150 mA
- On-state voltage (VTM)
- 2.1 V
- VTM measured at IT
- 25 A
- Off-state / reverse current (ID = IR), max.
- 10 mA
- Turn-off time (tq)
- 20 µs
- Critical rate of rise of off-state voltage (dV/dt)
- 50 V/µs
- Critical rate of rise of on-state current (di/dt)
- 50 A/µs
- Max. junction temperature (TJM)
- 125 °C
- Thermal resistance, junction–case (Rth j-c)
- 0.84 °C/W
- Package
- DO-5Ty
- Application
- fast switching thyristor
Sources: [1]
Variants (12)
| Note | Compare | ||
|---|---|---|---|
| T25F1 | 100 | 1990 catalogue | |
| T25F2 | 200 | 1990 catalogue | |
| T25F3 | 300 | 1990 catalogue | |
| T25F4 | 400 | 1990 catalogue | |
| T25F5 | 500 | 1990 catalogue | |
| T25F6 | 600 | 1990 catalogue | |
| T25F7 | 700 | 1990 catalogue | |
| T25F8 | 800 | 1990 catalogue | |
| T25F9 | 900 | 1990 catalogue | |
| T25F10 | 1000 | 1990 catalogue | |
| T25F11 | 1100 | 1990 catalogue | |
| T25F12 | 1200 | 1990 catalogue |
Click a column heading to sort. „+” adds a variant to the comparison (T25F).
Description
The T25F is a silicon fast switching thyristor made by IPRS Băneasa [1].
The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the T25F1…T25F12 (12 codes) among the „Fast switching thyristors ( ITAVM < 100 A )” of its „Thyristors” section [1]. Their values are under Variants [1]. In this table VT (at the IT given), ID = IR, IGT and VGT are maximum values, tq is a maximum, i²t is printed in kA²s, dv/dt is given with the footnote „Different dv/dt groups: C = 100, D = 200, G = 500, K = 1000 V/µs” and RthJ-C = 0.84 °C/W [1].
Gallery
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References
- [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 6 „Thyristors & triacs”, „Thyristors”, „Fast switching thyristors ( ITAVM < 100 A )”, pp. 6-34…6-35