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T408F

IPRS Băneasa

Also known as
T408F200, T408F400, T408F600, T408F800, T408F900, T408F1000, T408F1100, T408F1200
Year
Unknown
Category
Components
Type
Thyristors, diacs & triacs
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Type
fast switching thyristor
Repetitive peak reverse voltage (VRRM)
200–1200 V (see Variants)
Max. average on-state current (IT(AV)M)
477 A
IT(AV)M given at
TC = 76 °C
Max. RMS on-state current (ITRMS)
750 A
Max. surge on-state current (ITSM)
6400 A
I²t
205000 A²s
Gate trigger voltage (VGT)
2.2 V
Gate trigger current (IGT)
250 mA
On-state voltage (VTM)
2.2 V
VTM measured at IT
1500 A
Off-state / reverse current (ID = IR), max.
50 mA
Turn-off time (tq)
25 µs
Critical rate of rise of off-state voltage (dV/dt)
50 V/µs
Critical rate of rise of on-state current (di/dt)
200 A/µs
Max. junction temperature (TJM)
125 °C
Thermal resistance, junction–case (Rth j-c)
0.053 °C/W
Package
T-28
Application
fast switching thyristor

Sources: [1]

Variants (8)

NoteCompare
T408F2002001990 catalogue (preliminary data)
T408F4004001990 catalogue (preliminary data)
T408F6006001990 catalogue (preliminary data)
T408F8008001990 catalogue (preliminary data)
T408F9009001990 catalogue (preliminary data)
T408F100010001990 catalogue (preliminary data)
T408F110011001990 catalogue (preliminary data)
T408F120012001990 catalogue (preliminary data)

Click a column heading to sort. „+” adds a variant to the comparison (T408F).

Description

The T408F is a silicon fast switching thyristor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the T408F200, T408F400, T408F600, T408F800, T408F900, T408F1000, T408F1100 and T408F1200 (preliminary data) among the „Fast switching thyristors ( ITAVM > 100 A )” of its „Thyristors” section [1]. Their values are under Variants [1]. In this table VT (at the IT given), ID = IR, IGT and VGT are maximum values, tq is a maximum, marked „+”: „Different tq groups: F = 25, E = 20, S = 18 µs”, i²t is printed in kA²s and IT in kA, dv/dt is given with the footnote „Different dv/dt groups: B = 50, C = 400, L = 400, M = 1000 V/µs” and RthJ-C = 0.053 °C/W [1].

Documents

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References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 6 „Thyristors & triacs”, „Thyristors”, „Fast switching thyristors ( ITAVM > 100 A )”, pp. 6-44…6-45