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T40N

IPRS Băneasa

Also known as
T40N400, T40N600, T40N800, T40N1000, T40N1100, T40N1200, T40N1400, T40N1600, T40N1800
Year
Unknown
Category
Components
Type
Thyristors, diacs & triacs
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Type
mains frequency thyristor
Repetitive peak reverse voltage (VRRM)
400–1800 V (see Variants)
Max. average on-state current (IT(AV)M)
40 A
IT(AV)M given at
TC = 85 °C
Max. RMS on-state current (ITRMS)
80 A
Max. surge on-state current (ITSM)
1100 A
I²t
6000 A²s
Gate trigger voltage (VGT)
2 V
Gate trigger current (IGT)
200 mA
On-state voltage (VTM)
2.5 V
VTM measured at IT
200 A
Off-state / reverse current (ID = IR), max.
20 mA
Turn-off time (tq)
400 µs
Critical rate of rise of off-state voltage (dV/dt)
400 V/µs
Critical rate of rise of on-state current (di/dt)
120 A/µs
Max. junction temperature (TJM)
125 °C
Thermal resistance, junction–case (Rth j-c)
0.6 °C/W
Package
B-22
Application
mains frequency thyristor

Sources: [1]

Variants (9)

NoteCompare
T40N4004001990 catalogue
T40N6006001990 catalogue
T40N8008001990 catalogue
T40N100010001990 catalogue
T40N110011001990 catalogue
T40N120012001990 catalogue
T40N140014001990 catalogue
T40N160016001990 catalogue
T40N180018001990 catalogue

Click a column heading to sort. „+” adds a variant to the comparison (T40N).

Description

The T40N is a silicon mains frequency thyristor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the T40N400…T40N1800 (9 codes) among the „Mains frequency thyristors ( ITAVM < 100 A )” of its „Thyristors” section [1]. Their values are under Variants [1]. In this table VT (at the IT given), ID = IR, IGT and VGT are maximum values, tq is a maximum, i²t is printed in kA²s, dv/dt is given with the footnote „Different dv/dt groups: C = 400, F = 1000 V/µs” and RthJ-C = 0.6 °C/W [1].

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 6 „Thyristors & triacs”, „Thyristors”, „Mains frequency thyristors ( ITAVM < 100 A )”, pp. 6-10…6-11