General view

T630S

IPRS Băneasa

Also known as
T630S1200, T630S1400, T630S1600, T630S1800, T630S2000
Year
Unknown
Category
Components
Type
Thyristors, diacs & triacs
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Type
fast switching thyristor
Repetitive peak reverse voltage (VRRM)
1200–2000 V (see Variants)
Max. average on-state current (IT(AV)M)
968 A
IT(AV)M given at
TC = 50 °C
Max. RMS on-state current (ITRMS)
1500 A
Max. surge on-state current (ITSM)
9600 A
I²t
461000 A²s
Gate trigger voltage (VGT)
2.2 V
Gate trigger current (IGT)
250 mA
On-state voltage (VTM)
3.1 V
VTM measured at IT
3000 A
Off-state / reverse current (ID = IR), max.
30 mA
Turn-off time (tq)
60 µs
Critical rate of rise of off-state voltage (dV/dt)
50 V/µs
Critical rate of rise of on-state current (di/dt)
300 A/µs
Max. junction temperature (TJM)
125 °C
Thermal resistance, junction–case (Rth j-c)
0.029 °C/W
Package
T-50
Application
fast switching thyristor

Sources: [1]

Variants (5)

NoteCompare
T630S120012001990 catalogue
T630S140014001990 catalogue
T630S160016001990 catalogue
T630S180018001990 catalogue
T630S200020001990 catalogue

Click a column heading to sort. „+” adds a variant to the comparison (T630S).

Description

The T630S is a silicon fast switching thyristor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the T630S1200, T630S1400, T630S1600, T630S1800 and T630S2000 among the „Fast switching thyristors ( ITAVM > 100 A )” of its „Thyristors” section [1]. Their values are under Variants [1]. In this table VT (at the IT given), ID = IR, IGT and VGT are maximum values, tq is a maximum, i²t is printed in kA²s and IT in kA, dv/dt is given with the footnote „Different dv/dt groups: B = 50, C = 400, L = 400, M = 1000 V/µs” and RthJ-C = 0.029 °C/W [1].

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 6 „Thyristors & triacs”, „Thyristors”, „Fast switching thyristors ( ITAVM > 100 A )”, pp. 6-46…6-47