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T649N
IPRS Băneasa
- Also known as
- T649N400, T649N600, T649N800, T649N1000, T649N1100, T649N1200, T649N1400
- Manufacturer
- IPRS Băneasa

- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Thyristors, diacs & triacs
- Documentation score
- 1/5
- Last edited
- 25 OCT 2026
Specifications
- Type
- mains frequency thyristor
- Repetitive peak reverse voltage (VRRM)
- 400–1400 V (see Variants)
- Max. average on-state current (IT(AV)M)
- 649 A
- IT(AV)M given at
- TC = 85 °C
- Max. RMS on-state current (ITRMS)
- 1300 A
- Max. surge on-state current (ITSM)
- 11000 A
- I²t
- 605000 A²s
- Gate trigger voltage (VGT)
- 1.5 V
- Gate trigger current (IGT)
- 250 mA
- On-state voltage (VTM)
- 2 V
- VTM measured at IT
- 2600 A
- Off-state / reverse current (ID = IR), max.
- 80 mA
- Turn-off time (tq)
- 250 µs
- Critical rate of rise of off-state voltage (dV/dt)
- 400 V/µs
- Critical rate of rise of on-state current (di/dt)
- 120 A/µs
- Max. junction temperature (TJM)
- 125 °C
- Thermal resistance, junction–case (Rth j-c)
- 0.038 °C/W
- Package
- T-36B
- Application
- mains frequency thyristor
Sources: [1]
Variants (7)
| Note | Compare | ||
|---|---|---|---|
| T649N400 | 400 | 1990 catalogue (preliminary data) | |
| T649N600 | 600 | 1990 catalogue (preliminary data) | |
| T649N800 | 800 | 1990 catalogue (preliminary data) | |
| T649N1000 | 1000 | 1990 catalogue (preliminary data) | |
| T649N1100 | 1100 | 1990 catalogue (preliminary data) | |
| T649N1200 | 1200 | 1990 catalogue (preliminary data) | |
| T649N1400 | 1400 | 1990 catalogue (preliminary data) |
Click a column heading to sort. „+” adds a variant to the comparison (T649N).
Description
The T649N is a silicon mains frequency thyristor made by IPRS Băneasa [1].
The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the T649N400, T649N600, T649N800, T649N1000, T649N1100, T649N1200 and T649N1400 (preliminary data) among the „Mains frequency thyristors ( ITAVM > 100 A )” of its „Thyristors” section [1]. Their values are under Variants [1]. In this table VT (at the IT given), ID = IR, IGT and VGT are maximum values, tq is a maximum, i²t is printed in kA²s and IT in kA, dv/dt is given with the footnote „Different dv/dt groups: C = 400, F = 1000 V/µs” and RthJ-C = 0.038 °C/W [1].
Gallery
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References
- [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 6 „Thyristors & triacs”, „Thyristors”, „Mains frequency thyristors ( ITAVM > 100 A )”, pp. 6-22…6-23