General view

T698F

IPRS Băneasa

Also known as
T698F200, T698F400, T698F500, T698F600
Year
Unknown
Category
Components
Type
Thyristors, diacs & triacs
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Type
fast switching thyristor
Repetitive peak reverse voltage (VRRM)
200–600 V (see Variants)
Max. average on-state current (IT(AV)M)
698 A
IT(AV)M given at
TC = 85 °C
Max. RMS on-state current (ITRMS)
1100 A
Max. surge on-state current (ITSM)
11000 A
I²t
605000 A²s
Gate trigger voltage (VGT)
2 V
Gate trigger current (IGT)
200 mA
On-state voltage (VTM)
1.8 V
VTM measured at IT
2200 A
Off-state / reverse current (ID = IR), max.
50 mA
Turn-off time (tq)
20 µs
Critical rate of rise of off-state voltage (dV/dt)
50 V/µs
Critical rate of rise of on-state current (di/dt)
300 A/µs
Max. junction temperature (TJM)
140 °C
Thermal resistance, junction–case (Rth j-c)
0.05 °C/W
Package
T-28
Application
fast switching thyristor

Sources: [1]

Variants (4)

NoteCompare
T698F2002001990 catalogue (preliminary data)
T698F4004001990 catalogue (preliminary data)
T698F5005001990 catalogue (preliminary data)
T698F6006001990 catalogue (preliminary data)

Click a column heading to sort. „+” adds a variant to the comparison (T698F).

Description

The T698F is a silicon fast switching thyristor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the T698F200, T698F400, T698F500 and T698F600 (preliminary data) among the „Fast switching thyristors ( ITAVM > 100 A )” of its „Thyristors” section [1]. Their values are under Variants [1]. In this table VT (at the IT given), ID = IR, IGT and VGT are maximum values, tq is a maximum, marked „*”: „Different tq groups: E = 20, D = 15, C = 12 µs; this note is printed with a „+” mark”, i²t is printed in kA²s and IT in kA, dv/dt is given with the footnote „Different dv/dt groups: B = 50, C = 400, L = 400, M = 1000 V/µs” and RthJ-C = 0.05 °C/W [1].

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 6 „Thyristors & triacs”, „Thyristors”, „Fast switching thyristors ( ITAVM > 100 A )”, pp. 6-46…6-47