    ___                   __  ______   _  __
   /   |  _____________  /  |/  /   | | |/ /
  / /| | / ___/ ___/ _ \/ /|_/ / /| | |   /
 / ___ |/ /  / /__/  __/ /  / / ___ |/   |
/_/  |_/_/   \___/\___/_/  /_/_/  |_/_/|_|

No image available

General view

T860N

IPRS Băneasa

Also known as: T860N2600, T860N2800, T860N3000, T860N3200, T860N3400, T860N3600
Manufacturer: IPRS Băneasa
Country: Romania
Year: Unknown
Category: Components
Type: Thyristors, diacs & triacs
Documentation score: 1/5
Last edited: 25 OCT 2026

Specifications

Type: mains frequency thyristor
Repetitive peak reverse voltage (VRRM): 2600–3600 V (see Variants)
Max. average on-state current (IT(AV)M): 1275 A
IT(AV)M given at: TC = 53 °C
Max. RMS on-state current (ITRMS): 2000 A
Max. surge on-state current (ITSM): 17000 A
I²t: 1445000 A²s
Gate trigger voltage (VGT): 2 V
Gate trigger current (IGT): 250 mA
On-state voltage (VTM): 2.58 V
VTM measured at IT: 3000 A
Off-state / reverse current (ID = IR), max.: 250 mA
Turn-off time (tq): 400 µs
Critical rate of rise of off-state voltage (dV/dt): 400 V/µs
Critical rate of rise of on-state current (di/dt): 80 A/µs
Max. junction temperature (TJM): 125 °C
Thermal resistance, junction–case (Rth j-c): 0.021 °C/W
Package: T-50
Application: mains frequency thyristor

Sources: [1]

Variants (6)

		Note
T860N2600	2600	1990 catalogue (preliminary data)
T860N2800	2800	1990 catalogue (preliminary data)
T860N3000	3000	1990 catalogue (preliminary data)
T860N3200	3200	1990 catalogue (preliminary data)
T860N3400	3400	1990 catalogue (preliminary data)
T860N3600	3600	1990 catalogue (preliminary data)

Click a column heading to sort. „+” adds a variant to the comparison (T860N).

Description

The T860N is a silicon mains frequency thyristor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the T860N2600, T860N2800, T860N3000, T860N3200, T860N3400 and T860N3600 (preliminary data) among the „Mains frequency thyristors ( ITAVM > 100 A )” of its „Thyristors” section [1]. Their values are under Variants [1]. In this table VT (at the IT given), ID = IR, IGT and VGT are maximum values, tq is a maximum, i²t is printed in kA²s and IT in kA, dv/dt is given with the footnote „Different dv/dt groups: C = 400, F = 1000 V/µs” and RthJ-C = 0.021 °C/W [1].

Gallery

IPRS Băneasa T860N: T-50 case outline, thyristors and triacs (dimensions in mm) — T-50 case outline, thyristors and triacs (dimensions in mm)

Documents

No documents available yet.

References

[1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 6 „Thyristors & triacs”, „Thyristors”, „Mains frequency thyristors ( ITAVM > 100 A )”, pp. 6-24…6-25