No image available
TB25N
IPRS Băneasa
- Also known as
- TB25N05, TB25N1, TB25N2, TB25N3, TB25N4, TB25N5, TB25N6, TB25N7, TB25N8, TB25N9, TB25N10, TB25N11, TB25N12
- Manufacturer
- IPRS Băneasa

- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Thyristors, diacs & triacs
- Documentation score
- 1/5
- Last edited
- 25 OCT 2026
Specifications
- Type
- triac
- Repetitive peak reverse voltage (VRRM)
- 50–1200 V (see Variants)
- Max. RMS on-state current (ITRMS)
- 25 A
- ITRMS given at
- TC = 80 °C
- Max. surge on-state current (ITSM)
- 140 A
- I²t
- 315 A²s
- Gate trigger voltage (VGT)
- 3 V
- Gate trigger current (IGT)
- 100 mA
- On-state voltage (VTM)
- 2 V
- VTM measured at IT
- 40 A
- Off-state / reverse current (ID = IR), max.
- 3 mA
- Critical dV/dt in commutation
- 5 V/µs
- Max. junction temperature (TJM)
- 125 °C
- Thermal resistance, junction–case (Rth j-c)
- 2 °C/W
- Package
- DO-5Ty
- Application
- triac
Sources: [1]
Variants (13)
| Note | Compare | ||
|---|---|---|---|
| TB25N05 | 50 | 1990 catalogue (preliminary data) | |
| TB25N1 | 100 | 1990 catalogue (preliminary data) | |
| TB25N2 | 200 | 1990 catalogue (preliminary data) | |
| TB25N3 | 300 | 1990 catalogue (preliminary data) | |
| TB25N4 | 400 | 1990 catalogue (preliminary data) | |
| TB25N5 | 500 | 1990 catalogue (preliminary data) | |
| TB25N6 | 600 | 1990 catalogue (preliminary data) | |
| TB25N7 | 700 | 1990 catalogue (preliminary data) | |
| TB25N8 | 800 | 1990 catalogue (preliminary data) | |
| TB25N9 | 900 | 1990 catalogue (preliminary data) | |
| TB25N10 | 1000 | 1990 catalogue (preliminary data) | |
| TB25N11 | 1100 | 1990 catalogue (preliminary data) | |
| TB25N12 | 1200 | 1990 catalogue (preliminary data) |
Click a column heading to sort. „+” adds a variant to the comparison (TB25N).
Description
The TB25N is a silicon triac made by IPRS Băneasa [1].
The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the TB25N05…TB25N12 (13 codes, preliminary data) among the „Bidirectional thyristors (triacs)” of its „Triacs” section [1]. Their values are under Variants [1]. In this table all values are given for both polarities („+/−”), VT (at the IT given), ID, IGT and VGT are maximum values, (dv/dt)c is the critical rate of rise of the off-state voltage at commutation, i²t is printed in A²s and RthJ-C = 2 °C/W [1].
Gallery
No image availableDocuments
No documents available yet.
References
- [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 6 „Thyristors & triacs”, „Triacs”, „Bidirectional thyristors (triacs)”, pp. 6-48…6-49