General view

2N5020

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
P-channel
Max. power dissipation (Pc, Ptot, Pd)
0.25 W
Max. junction temperature (Tj)
150 °C
Noise figure (NF)
6.5 dB
Max. drain–source voltage |Vds|
25 V
Max. gate–source voltage |Vgs|
25 V
Gate–source cut-off / threshold voltage (Vgs off, Vgs th)
0.3…5 V
Zero-gate-voltage drain current (Idss)
0.3…1.2 mA
Gate leakage current (Igss)
≤ 1 nA
Forward transconductance (gm, gfs)
0.3 mA/V
Package
TO-18d
Application
P-channel field-effect transistors

Sources: [1]

Description

The 2N5020 is a silicon P-channel field-effect transistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the 2N5020 among the „P-channel field-effect transistors” of its „Field-effect” section [1], with Ptot 250 mW, TJM 150 °C, −/+VDS 25 V, VGSS 25 V, VGSoff 0.3–5 V, IGSS ≤ 1 nA, −IDSS 0.3–1.2 mA, Yfs 0.3 mS (VGS = 0 V, VDS = 15 V), Cis 15 pF, NF 6.5 dB (f = 1 kHz), TO-18d case [1].

Gallery

IPRS Băneasa 2N5020: TO-18d case outline and terminals, silicon transistors (dimensions in mm)No image available
TO-18d case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „Field-effect”, „P-channel field-effect transistors”, pp. 3-64…3-65