General view

2N5415

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
PNP
Max. power dissipation (Pc, Ptot, Pd)
10 W
Max. collector–base voltage |Vcb|
200 V
Max. collector–emitter voltage |Vce|
200 V
Max. collector current |Ic|
1 A
Max. junction temperature (Tj)
200 °C
Transition frequency (ft)
15 MHz
DC current gain (hFE), min
30
DC current gain (hFE), max
150
Collector–emitter saturation voltage (Vce sat)
2.5 V
Package
TO-39
Application
switching transistors

Sources: [1]

Description

The 2N5415 is a silicon PNP switching transistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the 2N5415 (preliminary data) among the „Switching transistors – metal case” of its „High power” section [1], with Ptot 10 W (TC = 25 °C), TJM 200 °C, VCBO 200 V, VCEO 200 V, IC 1 A, VCEsat ≤ 2.5 V (IC = 0.05 A), hFE 30–150 (IC = 0.05 A, VCE = 10 V), fT ≥ 15 MHz, TO-39 case [1].

Gallery

IPRS Băneasa 2N5415: TO-39 case outline and terminals, silicon transistors (dimensions in mm)No image available
TO-39 case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High power”, „Switching transistors – metal case”, pp. 3-10…3-11