General view

2N5836

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
0.36 W
Max. collector–emitter voltage |Vce|
10 V
Max. junction temperature (Tj)
175 °C
Transition frequency (ft)
2000 MHz
Package
TO-18
Application
Power UHF amplifier

Sources: [1]

Description

The 2N5836 is a silicon NPN RF transistor for professional applications made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the 2N5836 among the „RF transistors for professional applications” of its „High frequency” section [1], with application „Power UHF amplifier”, Ptot 360 mW (TA = 25 °C), TJM 175 °C, VCEO 10 V, fT ≥ 2000 MHz (IC = 50 mA), Crb ≤ 3.5 pF (VCB = 10 V), TO-18 case [1].

Gallery

IPRS Băneasa 2N5836: TO-18 case outline and terminals, silicon transistors (dimensions in mm)No image available
TO-18 case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High frequency”, „RF transistors for professional applications”, pp. 3-62…3-63