General view

2N5837

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
0.75 W
Max. collector–emitter voltage |Vce|
5 V
Max. junction temperature (Tj)
175 °C
Transition frequency (ft)
1700 MHz
Package
TO-39
Application
Power UHF amplifier

Sources: [1]

Description

The 2N5837 is a silicon NPN RF transistor for professional applications made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the 2N5837 (preliminary data) among the „RF transistors for professional applications” of its „High frequency” section [1], with application „Power UHF amplifier”, Ptot 750 mW (TA = 25 °C), TJM 175 °C, VCEO 5 V, fT ≥ 1700 MHz (IC = 100 mA), TO-39 case [1].

Gallery

IPRS Băneasa 2N5837: TO-39 case outline and terminals, silicon transistors (dimensions in mm)No image available
TO-39 case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High frequency”, „RF transistors for professional applications”, pp. 3-62…3-63