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2N5873

IPRS Băneasa

Also known as
2N5873/1, 2N5873/2
Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
90–115 W (see Variants)
Max. collector–base voltage |Vcb|
45–60 V (see Variants)
Max. collector–emitter voltage |Vce|
45–60 V (see Variants)
Max. collector current |Ic|
7 A
Max. junction temperature (Tj)
200 °C
Transition frequency (ft)
2.5–4 MHz (see Variants)
DC current gain (hFE), min
20
DC current gain (hFE), max
100 (see Variants)
Collector–emitter saturation voltage (Vce sat)
1 V
Package
TO-3
Application
general purpose epibase transistors

Sources: [1]

Variants (3)

Note
2N5873115606041001990 catalogue; VCEsat at IC = 4 A; hFE at IC = 2.5 A, VCE = 4 V
2N5873/111545454—1990 catalogue; VCEsat at IC = 4 A; hFE at IC = 2.5 A, VCE = 4 V
2N5873/29045452.5—1990 catalogue; VCEsat at IC = 2 A; hFE at IC = 2.5 A, VCE = 4 V

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Description

The 2N5873 is a silicon NPN general purpose epibase transistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the 2N5873, 2N5873/1 and 2N5873/2 among the „General purpose epibase transistors – metal case” of its „High power” section [1]. Their values are under Variants [1].

Gallery

IPRS Băneasa 2N5873: TO-3 case outline and terminals, silicon transistors (dimensions in mm)No image available
TO-3 case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High power”, „General purpose epibase transistors – metal case”, pp. 3-20…3-21