General view

2N6259

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
250 W
Max. collector–base voltage |Vcb|
170 V
Max. collector–emitter voltage |Vce|
150 V
Max. collector current |Ic|
30 A
Max. junction temperature (Tj)
175 °C
Transition frequency (ft)
0.8 MHz
DC current gain (hFE), min
15
DC current gain (hFE), max
60
Collector–emitter saturation voltage (Vce sat)
2.5 V
Package
TO-3
Application
general purpose transistors

Sources: [1]

Description

The 2N6259 is a silicon NPN general purpose transistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the 2N6259 among the „General purpose transistors – metal case” of its „High power” section [1], with Ptot 250 W (TC = 25 °C), TJM 175 °C, VCBO 170 V, VCEO 150 V, IC 30 A, VCEsat ≤ 2.5 V (IC = 16 A), hFE 15–60 (IC = 8 A, VCE = 2 V), fT ≥ 0.8 MHz, TO-3 case [1].

Gallery

IPRS Băneasa 2N6259: TO-3 case outline and terminals, silicon transistors (dimensions in mm)No image available
TO-3 case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High power”, „General purpose transistors – metal case”, pp. 3-18…3-19