General view

2N6339A

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
200 W
Max. collector–base voltage |Vcb|
140 V
Max. collector–emitter voltage |Vce|
120 V
Max. collector current |Ic|
25 A
Max. junction temperature (Tj)
200 °C
Transition frequency (ft)
40 MHz
DC current gain (hFE), min
30
DC current gain (hFE), max
120
Collector–emitter saturation voltage (Vce sat)
1.8 V
Rise time (tr)
300 ns
Storage time (ts)
1000 ns
Fall time (tf)
250 ns
Package
TO-3
Application
general purpose epibase transistors

Sources: [1]

Description

The 2N6339A is a silicon NPN general purpose epibase transistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the 2N6339A among the „General purpose epibase transistors – metal case” of its „High power” section [1], with Ptot 200 W (TC = 25 °C), TJM 200 °C, VCBO 140 V, VCEO 120 V, IC 25 A, VCEsat ≤ 1.8 V (IC = 25 A), hFE 30–120 (IC = 10 A, VCE = 2 V), tr ≤ 0.3 µs, ts ≤ 1 µs, tf ≤ 0.25 µs, fT ≥ 40 MHz, TO-3 case [1].

Gallery

IPRS Băneasa 2N6339A: TO-3 case outline and terminals, silicon transistors (dimensions in mm)No image available
TO-3 case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High power”, „General purpose epibase transistors – metal case”, pp. 3-20…3-21