General view

2N6371

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
117 W
Max. collector–base voltage |Vcb|
50 V
Max. collector–emitter voltage |Vce|
40 V
Max. collector current |Ic|
15 A
Max. junction temperature (Tj)
175 °C
Transition frequency (ft)
0.8 MHz
DC current gain (hFE), min
15
DC current gain (hFE), max
70
Collector–emitter saturation voltage (Vce sat)
3.5 V
Package
TO-3
Application
general purpose transistors

Sources: [1]

Description

The 2N6371 is a silicon NPN general purpose transistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the 2N6371 among the „General purpose transistors – metal case” of its „High power” section [1], with Ptot 117 W (TC = 25 °C), TJM 175 °C, VCBO 50 V, VCEO 40 V, IC 15 A, VCEsat ≤ 3.5 V (IC = 10 A), hFE 15–70 (IC = 3 A, VCE = 4 V), fT ≥ 0.8 MHz, TO-3 case [1].

Gallery

IPRS Băneasa 2N6371: TO-3 case outline and terminals, silicon transistors (dimensions in mm)No image available
TO-3 case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High power”, „General purpose transistors – metal case”, pp. 3-16…3-17