General view

BC263

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
PNP
Max. power dissipation (Pc, Ptot, Pd)
0.3 W
Max. collector–base voltage |Vcb|
25 V
Max. collector–emitter voltage |Vce|
25 V
Max. collector current |Ic|
0.1 A
Max. junction temperature (Tj)
175 °C
Transition frequency (ft)
130 MHz
Collector capacitance (Cc)
6 pF
Small-signal current gain (hfe)
125–900
Noise figure (NF)
4 dB
Collector–emitter saturation voltage (Vce sat)
0.5 V
Package
TO-18
Application
general purpose transistors

Sources: [1]

Description

The BC263 is a silicon PNP general purpose transistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the BC263 among the „General purpose transistors – metal case” of its „Low power” section [1], with Ptot 300 mW (TA = 25 °C), TJM 175 °C, VCBO 25 V, VCEO 25 V, IC 100 mA, VCEsat ≤ 500 mV (IC = 100 mA), hfe 125–900 (IC = 2 mA, VCE = 5 V), fT ≥ 130 MHz, NF ≤ 4 dB, Cob ≤ 6 pF, TO-18 case [1].

The hFE groups of the BC263 (symbols to be used when ordering): gr. VI 75–150, gr. A 125–260, gr. B 240–500, gr. C 450–900 [1].

Gallery

IPRS Băneasa BC263: TO-18 case outline and terminals, silicon transistors (dimensions in mm)No image available
TO-18 case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „Low power”, „General purpose transistors – metal case”, pp. 3-44…3-45