General view

BD650

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
PNP
Max. power dissipation (Pc, Ptot, Pd)
62.5 W
Max. collector–base voltage |Vcb|
100 V
Max. collector–emitter voltage |Vce|
100 V
Max. collector current |Ic|
8 A
Max. junction temperature (Tj)
150 °C
DC current gain (hFE), min
750
Small-signal current gain (hfe)
≥ 10 (f = 1 MHz)
Collector–emitter saturation voltage (Vce sat)
2 V
Package
TO-220
Application
general purpose Darlingtons

Sources: [1]

Description

The BD650 is a silicon PNP general purpose Darlington transistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the BD650 (preliminary data) among the „General purpose Darlingtons – plastic case” of its „High power” section [1], with Ptot 62.5 W (TC = 25 °C), TJM 150 °C, VCBO 100 V, VCEO 100 V, IC 8 A, VCEsat ≤ 2 V (IC = 3 A), hFE 750 (IC = 3 A, VCE = 3 V), hfe ≥ 10 at f = 1 MHz, TO-220 case [1].

Gallery

IPRS Băneasa BD650: TO-220 case outline and terminals, silicon transistors (dimensions in mm)No image available
TO-220 case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High power”, „General purpose Darlingtons – plastic case”, pp. 3-06…3-07