General view

BF509

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
PNP
Max. power dissipation (Pc, Ptot, Pd)
0.3 W
Max. collector–emitter voltage |Vce|
35 V
Max. junction temperature (Tj)
150 °C
Transition frequency (ft)
700 MHz
Feedback capacitance (C12e, Cre)
1 pF
Noise figure (NF)
2.5 dB
Power gain (Gp)
17 dB
Package
TO-92a
Application
AGC VHF amplifier

Sources: [1]

Description

The BF509 is a silicon PNP RF transistor for radio-TV made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the BF509 among the „RF transistors for radio-TV – plastic case” of its „High frequency” section [1], with application „AGC VHF amplifier”, Ptot 300 mW (with the leads kept at 25 °C at 2 mm from the case), TJM 150 °C, VCEO 35 V, Gp typ. 17 dB, NF typ. 2.5 dB (IC = 3 mA, f = 200 MHz), fT typ. 700 MHz (IC = 3 mA), Cre ≤ 1 pF (VCB = 10 V), TO-92a case [1].

Gallery

IPRS Băneasa BF509: TO-92a case outline and terminals, silicon transistors (dimensions in mm)No image available
TO-92a case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High frequency”, „RF transistors for radio-TV – plastic case”, pp. 3-60…3-61