General view

BU931

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
150 W
Max. collector–emitter voltage |Vce|
400 V
Max. collector–emitter voltage, base shorted |Vces|
450 V
Max. collector current |Ic|
15 A
Max. junction temperature (Tj)
175 °C
DC current gain (hFE), min
80
Collector–emitter saturation voltage (Vce sat)
1.8 V
Package
TO-3d
Application
high voltage switching Darlingtons

Sources: [1]

Description

The BU931 is a silicon NPN high voltage switching Darlington transistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the BU931 among the „High voltage switching Darlingtons – metal case” of its „High power” section [1], with Ptot 150 W (TC = 25 °C), TJM 175 °C, VCES 450 V, VCEO 400 V, IC 15 A, VCEsat ≤ 1.8 V (IC = 10 A), hFE 80 (IC = 8 A), TO-3d case [1].

Gallery

IPRS Băneasa BU931: TO-3d case outline and terminals, silicon transistors (dimensions in mm)No image available
TO-3d case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High power”, „High voltage switching Darlingtons – metal case”, pp. 3-32…3-33