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General view

BUS13

IPRS Băneasa

Also known as: BUS13A, BUS13/5, BUS13/6, BUS13/7
Manufacturer: IPRS Băneasa
Country: Romania
Year: Unknown
Category: Components
Type: Transistors
Documentation score: 1/5
Last edited: 25 OCT 2026

Specifications

Material: Si
Polarity: NPN
Max. power dissipation (Pc, Ptot, Pd): 150 W
Max. collector–emitter voltage |Vce|: 350–450 V (see Variants)
Max. collector–emitter voltage, base shorted |Vces|: 500–1000 V (see Variants)
Max. collector current |Ic|: 15 A (see Variants)
Max. peak collector current (Icm): 30 A (see Variants)
Max. junction temperature (Tj): 175 °C
DC current gain (hFE), min: 30
Collector–emitter saturation voltage (Vce sat): 1.5 V
Turn-on time (ton): 1000 ns
Storage time (ts): 4000 ns
Fall time (tf): 800 ns
Package: TO-3d
Application: high voltage switching transistors

Sources: [1]

Variants (5)

					Note
BUS13	400	850	15	—	1990 catalogue (preliminary data); VCEsat at IC = 10 A; hFE at IC = 1.2 A, VCE = 5 V
BUS13A	450	1000	—	30	1990 catalogue (preliminary data); VCEsat at IC = 8 A; hFE at IC = 1.2 A, VCE = 5 V
BUS13/5	350	500	15	—	1990 catalogue (preliminary data); VCEsat at IC = 10 A; hFE at IC = 1.2 A, VCE = 5 V
BUS13/6	375	600	—	30	1990 catalogue (preliminary data); VCEsat at IC = 10 A; hFE at IC = 1.2 A, VCE = 5 V
BUS13/7	400	700	15	—	1990 catalogue (preliminary data); VCEsat at IC = 10 A; hFE at IC = 1.2 A, VCE = 5 V

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Description

The BUS13 is a silicon NPN high voltage switching transistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the BUS13, BUS13A and BUS13/5 to BUS13/7 (BUS13, BUS13A: preliminary data) among the „High voltage switching transistors – metal case” of its „High power” section [1]. Their values are under Variants [1].

Gallery

IPRS Băneasa BUS13: TO-3d case outline and terminals, silicon transistors (dimensions in mm) — TO-3d case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

[1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High power”, „High voltage switching transistors – metal case”, pp. 3-28…3-29