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General view

BUS14

IPRS Băneasa

Also known as: BUS14A, BUS14/4, BUS14/5, BUS14/6, BUS14/7
Manufacturer: IPRS Băneasa
Country: Romania
Year: Unknown
Category: Components
Type: Transistors
Documentation score: 1/5
Last edited: 25 OCT 2026

Specifications

Material: Si
Polarity: NPN
Max. power dissipation (Pc, Ptot, Pd): 214 W
Max. collector–emitter voltage |Vce|: 300–450 V (see Variants)
Max. collector–emitter voltage, base shorted |Vces|: 400–1000 V (see Variants)
Max. collector current |Ic|: 30 A (see Variants)
Max. peak collector current (Icm): 50 A (see Variants)
Max. junction temperature (Tj): 175 °C
DC current gain (hFE), min: 30
Collector–emitter saturation voltage (Vce sat): 1.5 V
Turn-on time (ton): 1000 ns
Storage time (ts): 4000 ns
Fall time (tf): 800 ns
Package: TO-3d
Application: high voltage switching transistors

Sources: [1]

Variants (6)

					Note
BUS14	400	850	30	—	1990 catalogue (preliminary data); VCEsat at IC = 20 A; hFE at IC = 2 A, VCE = 5 V
BUS14A	450	1000	—	50	1990 catalogue (preliminary data); VCEsat at IC = 16 A; hFE at IC = 2 A, VCE = 5 V
BUS14/4	300	400	30	—	1990 catalogue (preliminary data); VCEsat at IC = 20 A; hFE at IC = 2 A, VCE = 5 V
BUS14/5	350	500	—	50	1990 catalogue (preliminary data); VCEsat at IC = 20 A; hFE at IC = 2 A, VCE = 5 V
BUS14/6	375	600	30	—	1990 catalogue (preliminary data); VCEsat at IC = 20 A; hFE at IC = 2 A, VCE = 5 V
BUS14/7	400	700	—	50	1990 catalogue (preliminary data); VCEsat at IC = 20 A; hFE at IC = 2 A, VCE = 5 V

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Description

The BUS14 is a silicon NPN high voltage switching transistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the BUS14, BUS14A and BUS14/4 to BUS14/7 (BUS14, BUS14A: preliminary data) among the „High voltage switching transistors – metal case” of its „High power” section [1]. Their values are under Variants [1].

Gallery

IPRS Băneasa BUS14: TO-3d case outline and terminals, silicon transistors (dimensions in mm) — TO-3d case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

[1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High power”, „High voltage switching transistors – metal case”, pp. 3-28…3-29