General view

BUT11

IPRS Băneasa

Also known as
BUT11A, BUT11/5, BUT11/6, BUT11/7
Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
100 W
Max. collector–emitter voltage |Vce|
350–450 V (see Variants)
Max. collector–emitter voltage, base shorted |Vces|
500–1000 V (see Variants)
Max. collector current |Ic|
5 A (see Variants)
Max. peak collector current (Icm)
10 A (see Variants)
Max. junction temperature (Tj)
175 °C
DC current gain (hFE), min
30
Collector–emitter saturation voltage (Vce sat)
1.5 V
Turn-on time (ton)
1000 ns
Storage time (ts)
4000 ns
Fall time (tf)
800 ns
Package
TO-3d
Application
high voltage switching transistors

Sources: [1]

Variants (5)

NoteCompare
BUT114008505—1990 catalogue (preliminary data); VCEsat at IC = 3 A; hFE at IC = 0.5 A, VCE = 5 V
BUT11A4501000—101990 catalogue (preliminary data); VCEsat at IC = 2.5 A; hFE at IC = 0.5 A, VCE = 5 V
BUT11/53505005—1990 catalogue (preliminary data); VCEsat at IC = 3 A; hFE at IC = 0.5 A, VCE = 5 V
BUT11/6375600—101990 catalogue (preliminary data); VCEsat at IC = 3 A; hFE at IC = 0.5 A, VCE = 5 V
BUT11/74007005—1990 catalogue (preliminary data); VCEsat at IC = 3 A; hFE at IC = 0.5 A, VCE = 5 V

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Description

The BUT11 is a silicon NPN high voltage switching transistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the BUT11, BUT11A and BUT11/5 to BUT11/7 (BUT11, BUT11A: preliminary data) among the „High voltage switching transistors – metal case” of its „High power” section [1]. Their values are under Variants [1].

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High power”, „High voltage switching transistors – metal case”, pp. 3-28…3-29