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BUT11
IPRS Băneasa
- Also known as
- BUT11A, BUT11/5, BUT11/6, BUT11/7
- Manufacturer
- IPRS Băneasa

- Country
- Romania
- Year
- Unknown
- Category
- Components
- Type
- Transistors
- Documentation score
- 1/5
- Last edited
- 25 OCT 2026
Specifications
- Material
- Si
- Polarity
- NPN
- Max. power dissipation (Pc, Ptot, Pd)
- 100 W
- Max. collector–emitter voltage |Vce|
- 350–450 V (see Variants)
- Max. collector–emitter voltage, base shorted |Vces|
- 500–1000 V (see Variants)
- Max. collector current |Ic|
- 5 A (see Variants)
- Max. peak collector current (Icm)
- 10 A (see Variants)
- Max. junction temperature (Tj)
- 175 °C
- DC current gain (hFE), min
- 30
- Collector–emitter saturation voltage (Vce sat)
- 1.5 V
- Turn-on time (ton)
- 1000 ns
- Storage time (ts)
- 4000 ns
- Fall time (tf)
- 800 ns
- Package
- TO-3d
- Application
- high voltage switching transistors
Sources: [1]
Variants (5)
| Note | Compare | |||||
|---|---|---|---|---|---|---|
| BUT11 | 400 | 850 | 5 | — | 1990 catalogue (preliminary data); VCEsat at IC = 3 A; hFE at IC = 0.5 A, VCE = 5 V | |
| BUT11A | 450 | 1000 | — | 10 | 1990 catalogue (preliminary data); VCEsat at IC = 2.5 A; hFE at IC = 0.5 A, VCE = 5 V | |
| BUT11/5 | 350 | 500 | 5 | — | 1990 catalogue (preliminary data); VCEsat at IC = 3 A; hFE at IC = 0.5 A, VCE = 5 V | |
| BUT11/6 | 375 | 600 | — | 10 | 1990 catalogue (preliminary data); VCEsat at IC = 3 A; hFE at IC = 0.5 A, VCE = 5 V | |
| BUT11/7 | 400 | 700 | 5 | — | 1990 catalogue (preliminary data); VCEsat at IC = 3 A; hFE at IC = 0.5 A, VCE = 5 V |
Click a column heading to sort. „+” adds a variant to the comparison (BUT11).
Description
The BUT11 is a silicon NPN high voltage switching transistor made by IPRS Băneasa [1].
The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the BUT11, BUT11A and BUT11/5 to BUT11/7 (BUT11, BUT11A: preliminary data) among the „High voltage switching transistors – metal case” of its „High power” section [1]. Their values are under Variants [1].
Gallery
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References
- [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High power”, „High voltage switching transistors – metal case”, pp. 3-28…3-29