General view

BUW25

IPRS Băneasa

Also known as
BUW25/5
Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
125 W
Max. collector–emitter voltage |Vce|
400 V
Max. collector–emitter voltage, base shorted |Vces|
500–600 V (see Variants)
Max. collector current |Ic|
10 A
Max. junction temperature (Tj)
150 °C
DC current gain (hFE), min
15
Collector–emitter saturation voltage (Vce sat)
1.5 V
Turn-on time (ton)
500 ns
Storage time (ts)
2000 ns
Fall time (tf)
500 ns
Package
TO-3d
Application
high voltage switching transistors

Sources: [1]

Variants (2)

Note
BUW256001990 catalogue (preliminary data); VCEsat at IC = 4 A; hFE at IC = 1 A, VCE = 5 V
BUW25/55001990 catalogue (preliminary data); VCEsat at IC = 4 A; hFE at IC = 1 A, VCE = 5 V

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Description

The BUW25 is a silicon NPN high voltage switching transistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the BUW25 and BUW25/5 (preliminary data) among the „High voltage switching transistors – metal case” of its „High power” section [1]. Their values are under Variants [1].

Gallery

IPRS Băneasa BUW25: TO-3d case outline and terminals, silicon transistors (dimensions in mm)No image available
TO-3d case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High power”, „High voltage switching transistors – metal case”, pp. 3-30…3-31