General view

BUW26

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
125 W
Max. collector–emitter voltage |Vce|
450 V
Max. collector–emitter voltage, base shorted |Vces|
800 V
Max. collector current |Ic|
10 A
Max. junction temperature (Tj)
200 °C
DC current gain (hFE), min
15
Collector–emitter saturation voltage (Vce sat)
1.5 V
Turn-on time (ton)
500 ns
Storage time (ts)
2000 ns
Fall time (tf)
500 ns
Package
TO-3d
Application
high voltage switching transistors

Sources: [1]

Description

The BUW26 is a silicon NPN high voltage switching transistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the BUW26 (preliminary data) among the „High voltage switching transistors – metal case” of its „High power” section [1], with Ptot 125 W (TC = 25 °C), TJM 200 °C, VCES 800 V, VCEO 450 V, IC 10 A, VCEsat ≤ 1.5 V (IC = 4 A), hFE 15 (IC = 1 A, VCE = 5 V), ton ≤ 0.5 µs, ts ≤ 2 µs, tf ≤ 0.5 µs, TO-3d case [1].

Gallery

IPRS Băneasa BUW26: TO-3d case outline and terminals, silicon transistors (dimensions in mm)No image available
TO-3d case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High power”, „High voltage switching transistors – metal case”, pp. 3-30…3-31