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BUX84

IPRS Băneasa

Also known as
BUX84/5, BUX84/6, BUX84/7
Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
40 W
Max. collector–emitter voltage |Vce|
350–400 V (see Variants)
Max. collector–emitter voltage, base reverse-biased |Vcex|
500–800 V (see Variants)
Max. collector current |Ic|
2 A
Max. junction temperature (Tj)
150 °C
DC current gain (hFE), min
20–25 (see Variants)
Collector–emitter saturation voltage (Vce sat)
3 V
Turn-on time (ton)
500 ns (see Variants)
Storage time (ts)
3500 ns (see Variants)
Fall time (tf)
1000–1400 ns (see Variants)
Package
TO-220
Application
high voltage switching transistors

Sources: [1]

Variants (4)

Note
BUX8440080025500350014001990 catalogue (preliminary data); VCEsat at IC = 1 A; hFE at IC = 0.05 A, VCE = 5 V
BUX84/535050020——10001990 catalogue (preliminary data); VCEsat at IC = 1 A; hFE at IC = 0.05 A, VCE = 5 V
BUX84/637560020——10001990 catalogue (preliminary data); VCEsat at IC = 1 A; hFE at IC = 0.05 A, VCE = 5 V; case printed „TP-220”
BUX84/740070020——10001990 catalogue (preliminary data); VCEsat at IC = 1 A; hFE at IC = 0.05 A, VCE = 5 V

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Description

The BUX84 is a silicon NPN high voltage switching transistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the BUX84 and BUX84/5 to BUX84/7 (BUX84: preliminary data) among the „High voltage switching transistors – plastic case” of its „High power” section [1]. Their values are under Variants [1].

Gallery

IPRS Băneasa BUX84: TO-220 case outline and terminals, silicon transistors (dimensions in mm)No image available
TO-220 case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High power”, „High voltage switching transistors – plastic case”, pp. 3-08…3-09