General view

BUX85

IPRS Băneasa

Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
40 W
Max. collector–emitter voltage |Vce|
450 V
Max. collector–emitter voltage, base reverse-biased |Vcex|
900 V
Max. collector current |Ic|
2 A
Max. junction temperature (Tj)
150 °C
DC current gain (hFE), min
20
Collector–emitter saturation voltage (Vce sat)
3 V
Fall time (tf)
1000 ns
Package
TO-220
Application
high voltage switching transistors

Sources: [1]

Description

The BUX85 is a silicon NPN high voltage switching transistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the BUX85 (preliminary data) among the „High voltage switching transistors – plastic case” of its „High power” section [1], with Ptot 40 W (TC = 25 °C), TJM 150 °C, VCEX 900 V, VCEO 450 V, IC 2 A, VCEsat ≤ 3 V (IC = 1 A), hFE 20 (IC = 0.05 A, VCE = 5 V), tf ≤ 1 µs, TO-220 case [1].

Gallery

IPRS Băneasa BUX85: TO-220 case outline and terminals, silicon transistors (dimensions in mm)No image available
TO-220 case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High power”, „High voltage switching transistors – plastic case”, pp. 3-08…3-09