General view

BUX86

IPRS Băneasa

Also known as
BUX86/4, BUX86/5, BUX86/6, BUX86/7
Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
NPN
Max. power dissipation (Pc, Ptot, Pd)
20 W
Max. collector–emitter voltage |Vce|
300–400 V (see Variants)
Max. collector–emitter voltage, base reverse-biased |Vcex|
400–800 V (see Variants)
Max. peak collector current (Icm)
1 A
Max. junction temperature (Tj)
150 °C
DC current gain (hFE)
typ. 50
Collector–emitter saturation voltage (Vce sat)
1.5 V
Turn-on time (ton)
500 ns
Storage time (ts)
3500 ns
Fall time (tf)
500 ns
Package
TO-126
Application
high voltage switching transistors

Sources: [1]

Variants (5)

Note
BUX864008001990 catalogue (preliminary data); VCEsat at IC = 0.1 A; hFE at IC = 0.05 A, VCE = 5 V
BUX86/43004001990 catalogue (preliminary data); VCEsat at IC = 0.1 A; hFE at IC = 0.05 A, VCE = 5 V
BUX86/53505001990 catalogue (preliminary data); VCEsat at IC = 0.1 A; hFE at IC = 0.05 A, VCE = 5 V
BUX86/63756001990 catalogue (preliminary data); VCEsat at IC = 0.1 A; hFE at IC = 0.05 A, VCE = 5 V
BUX86/74007001990 catalogue (preliminary data); VCEsat at IC = 0.1 A; hFE at IC = 0.05 A, VCE = 5 V

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Description

The BUX86 is a silicon NPN high voltage switching transistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the BUX86 and BUX86/4 to BUX86/7 (BUX86: preliminary data) among the „High voltage switching transistors – plastic case” of its „High power” section [1]. Their values are under Variants [1].

Gallery

IPRS Băneasa BUX86: TO-126 (SOT-32) case outline and terminals, silicon transistors (dimensions in mm)No image available
TO-126 (SOT-32) case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „High power”, „High voltage switching transistors – plastic case”, pp. 3-08…3-09