General view

FT202

IPRS Băneasa

Also known as
FT202A, FT202B, FT202C, FT202D, FT202E
Year
Unknown
Category
Components
Type
Transistors
Documentation score
1/5
Last edited
25 OCT 2026

Specifications

Material
Si
Polarity
NPN
Structure / technology
phototransistor
Max. power dissipation (Pc, Ptot, Pd)
0.3 W
Max. collector–emitter voltage |Vce|
30 V
Max. collector current |Ic|
0.05 A (see Variants)
Max. peak collector current (Icm)
0.1 A (see Variants)
Max. junction temperature (Tj)
70 °C
Collector–emitter saturation voltage (Vce sat)
1 V
Turn-on time (ton)
230000 ns
Turn-off time (toff)
180000 ns
Package
TO-18f
Application
phototransistor

Sources: [1]

Variants (5)

Note
FT202A0.05—1990 catalogue; VCEsat at IC = 1 mA, EA = 1 klx; ICL 1–6 mA; sensitivity 1–6 µA/lx (EA = 1 klx); λp 800 nm; λ0.5 520–950 nm
FT202B—0.11990 catalogue; VCEsat at IC = 5 mA, EA = 1 klx; ICL 4–12 mA; sensitivity 4–12 µA/lx (EA = 1 klx); λp 800 nm; λ0.5 520–950 nm
FT202C0.05—1990 catalogue; VCEsat at IC = 10 mA, EA = 1 klx; ICL 8–24 mA; sensitivity 8–24 µA/lx (EA = 1 klx); λp 800 nm; λ0.5 520–950 nm
FT202D—0.11990 catalogue; VCEsat at IC = 20 mA, EA = 1 klx; ICL 16–56 mA; sensitivity 16–56 µA/lx (EA = 1 klx); λp 800 nm; λ0.5 520–950 nm
FT202E0.05—1990 catalogue; VCEsat at IC = 40 mA, EA = 1 klx; ICL 44 mA; sensitivity 44 µA/lx (EA = 1 klx); λp 800 nm; λ0.5 520–950 nm

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Description

The FT202 is a silicon NPN phototransistor made by IPRS Băneasa [1].

The I.P.R.S. Băneasa Full Line Condensed Catalog (1990) lists the FT202A, FT202B, FT202C, FT202D and FT202E among the „Phototransistors” of its „Miscellaneous” section [1]. Their values are under Variants [1].

The catalog notes that the VCBO column is marked „(*) Base terminal connected on request” (no VCBO values are printed) [1].

Gallery

IPRS Băneasa FT202: TO-18f case outline and terminals, silicon transistors (dimensions in mm)No image available
TO-18f case outline and terminals, silicon transistors (dimensions in mm)

Documents

No documents available yet.

References

  1. [1]I.P.R.S. Băneasa – „Full Line Condensed Catalog”, 1990, section 3 „Silicon transistors”, „Miscellaneous”, „Phototransistors”, pp. 3-66…3-67